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3Inch R-axis 76.2mm Al2O3 Sapphire Crystal Wafers Custom Sapphire Glass SSP 0.43mm
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3Inch R-axis 76.2mm Al2O3 Sapphire Crystal Wafers Custom Sapphire Glass SSP 0.43mm

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連絡先担当者 Mr. Wang

Shanghai, Shanghai

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製品仕様

タイトルまたは説明

2inch /3inch 4inch /5inch  C-axis/ a-axis/  r-axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness

About synthetic sapphire crystal

Sapphire Properties

GENERAL
Chemical Formula   Al2O3
Crystal Stucture   Hexagonal System ((hk o 1)
Unit Cell Dimension   a=4.758 , c=12.991 , c:a=2.730
PHYSICAL
    Metric        English (Imperial)
Density   3.98 g/cc 0.144 lb/in3
Hardness   1525 - 2000 Knoop, 9 mhos             3700° F
Melting Point   2310 K (2040° C)  
STRUCTURAL
Tensile Strength   275 MPa to 400 MPa 40,000 to 58,000 psi
  at 20° 400 MPa 58,000 psi (design min.)
  at 500° C 275 MPa 40,000 psi (design min.)
  at 1000° C           355 MPa 52,000 psi (design min.)
Flexural Stength                       480 MPa to 895 MPa 70,000 to 130,000 psi
Compression Strength   2.0 GPa (ultimate) 300,000 psi (ultimate)                  
 

The Kyropoulos process (KY process) for sapphire crystal growth is currently used by many companies in China to produce sapphire for the electronics and optics industries.
High-purity, aluminum oxide is melted in a crucible at over 2100 degrees Celsius. Typically the crucible is made of tungsten or molybdenum. A precisely oriented seed crystal is dipped into the molten alumina. The seed crystal is slowly pulled upwards and may be rotated simultaneously. By precisely controlling the temperature gradients, rate of pulling and rate of temperature decrease, it is possible to produce a large, single-crystal, roughly cylindrical ingot from the melt.
After single crystal sapphire boules are grown, they are core-drilled into cylindrical rods, The rods are sliced up into the desired window thickness and finally polished to the desired surface finish.

3Inch R-axis 76.2mm Al2O3 Sapphire Crystal Wafers Custom Sapphire Glass SSP 0.43mm 0

国: China
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