B-grade multi solar wafer with Dirt/Inclusion

タイトルまたは説明

Product Specification Dirt/Inclusion (SK) Wafers **6mm***6mm***0 μm SK wafers are wafers which are A-quality wafers with respect to all properties apart from the occurrence of a stained area or one or more inclusions. 1. Crystal and Material Properties Property Specification Control frequency Measuring method Crystallinity Multicrystalline - - Crystal defects Possible precipitation with size > 0.5 mm Continuous IR-Camera Conductivity type P-type - - Dopant Boron - - Interstitial Oxygen concentration ï‚£ 8 x ***7 atoms/cm3 Spot check twice a year. Centre and corner block FTIR ASTM F******3a Substitutional Carbon concentration (Cs) ï‚£ 1 x ***8 atoms/cm3 Spot check twice a year. Centre and corner block FTIR ASTM F******3 2. Electrical properties Property Specification Control frequency Measuring method Average resistivity 0.8 – 2.0 .cm Each block Eddie Current Probe Semilab RT***0 Effective minority carrier lifetime 1:  1.0µsec 2: Average > 3.5 µsec 3: No lifetime dip > 3, 0 µs. Each block Microwave photo-conductive method. Measured on as-cut block surface Semilab WT**5X 3. Geometry Property Specification Control frequency Measuring method Shape Square - - Length of wafer edge **6.0 ± 0.5 mm Continuous Vision system Angle between adjacent sides *0º ± 0, 3º Continuous Vision System Bevel edge width 0.5 – 2.0 mm Continuous Vision System Average thickness **0 ± *0 µm Continuous Mean value taken from thickness measurement of 5 points TTV ï‚£ *0µm Continuous Difference between max and min value taken from thickness measurements of five points 4. Surface properties Property Specification Control frequency Measuring method Wafer slicing Glycol based wafering Inform to customer if changed - Wafer cleaning Water + detergent Inform to customer if changed - Wafer surface Can be stained Continuous IR-Camera 5. Appearance Property Specification Control frequency Measuring method Edge defect (through the wafer) length ï‚£ 0.