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国:
China
モデル番号:
IRF5803TRPBF
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製品グループ :
連絡先担当者 myra
Xiaolou, Guangdong
These P-channel HEXFET� Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP*6 package with its customized leadframe produces a HEXFET� power MOSFET with RDS(on) *0% less than a similar size SOT**3. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly **0% compared to the SOT**3.
| 国: | China |
| モデル番号: | IRF5803TRPBF |
| 离岸价格: | Get Latest Price |
| ロケーション: | - |
| 最低注文量の価格: | - |
| 最低注文量: | - |
| パッケージの詳細: | - |
| 納期: | - |
| 供給能力: | - |
| 支払いタイプ: | - |
| 製品グループ : | ic electronic components |
