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IGBT Module

离岸价格

Get Latest Price

- Minimum Order

国:

Russia

モデル番号:

M9-200-12

离岸价格:

（交渉可能） Get Latest Price

ロケーション:

Russia

最低注文量の価格:

最低注文量:

パッケージの詳細:

納期:

4 weeks

供給能力:

支払いタイプ:

T/T

製品グループ :

今すぐお問い合わせください

パンフレットを見る

Electrum AV, Ltd

Russia

無料会員

連絡先担当者 Ms. Lyudmila

5 Naugorskoe highway, Orel, Russia

今すぐお問い合わせください

タイトルまたは説明

M9 (MOSFET) – the module of single key MOSFET is intended for commutation of power loads and use composed of power converters with high switching frequency.

M9 (IGBT) – single IGBT module, shunted by reverse FRD, is intended for commutation of power loads and use composed of power converters with high switching frequency.

M*0 – tandem IGBT, shunted by reverse FRS and FRD is intended for use in the capacity of switching elements in power converters.

M*1 – tandem FRD and IGBT key, shunted by reverse FRD is intended for use in the capacity of switching elements in power converters.

M*2 – two tandem MOSFET or IGBT keys shunted by reverse FRD is intended for use in the capacity of switching elements in power converters.

国:	Russia
モデル番号:	M9-200-12
离岸价格:	（交渉可能） Get Latest Price
ロケーション:	Russia
最低注文量の価格:	-
最低注文量:	-
パッケージの詳細:	-
納期:	4 weeks
供給能力:	-
支払いタイプ:	T/T
製品グループ :	-