タイトルまたは説明

      Industrial SiC vacuum sintering furnace, silicon carbide sintering, universities small vacuum furnace

  Silicon carbide sintering furnace is mainly used in New materials reaction sintered silicon carbide. The maximum temperature is ***0C. With glue, dust removal system, complete evacuation and sintering meanwhile, silicon carbide sintering furnace has horizontal and vertical two types. Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Silicon carbide powder has been mass-produced since ***3 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around ***7, and today SiC is used in semiconductor electronics applications that are high-temperature, or high-voltage, or both. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as synthetic moissanite. Silicon carbide with high surface area can be produced from SiO2 contained in plant material.