Mono-crystalline 5'' silicon wafers

タイトルまたは説明

1. Dimensions of the side - **5 +/- 0,5 mm 2. Diagonal - **0 + /- 1,0 mm 3. Growth Method - CZ 4. Crystal Orientation - (**0) +/- 1,0° 5. Conductivity Type - P 6. LIFE TIME - >5 µs 7. Dopant - Boron 8. RESISTIVITY - 0,**0,5 Ohm*cm 9. Resistivity gradient - *0 % *0. Oxygen concentration - <1****8At/cm3 *1. Carbon concentration - <5****6At/cm3 *2. Normal angle variation - <0,5 degrees *3. Edge orientation - <**1> *4. Non-parallelism - <0,*3 mm *5. Side length tolerance - <1,0 mm *6. Off orientation of crystal - 0+/*2 degrees *7. Surface and edge profile - As cut and cleaned *8. Thickness - **0 +/- *0 µm *9. TTV - <*0 µm *0. Bow - <*0 µm *1. Warp - <*0 µm *2. Allowable surface saw damage - <*0 µm *3. Edge defect Length - <1 mm, depth <0,5 mm *4. Etching - none *5. Contamination - none