タイトルまたは説明

â–  DESCRIPTION
The MB*5RC*6 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,**8 words ×
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, the MB*5RC*6 is able to retain data without using a data backup battery.
The memory cells used in the MB*5RC*6 have at least ***2 Read/Write operation endurance per byte, which
is a significant improvement over the number of read/write operations than by other nonvolatile memory
products.
The MB*5RC*6 can provide writing in one byte units because the long writing time is not required unlike
Flash memory and E2PROM. Therefore, the writing completion waiting sequence like a write busy state is
not required.
â–  FEATURES
• Bit configuration : 2,**8 words × 8 bits
• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency : 1 MHz (Max)
• Read/Write endurance : ***2 times/byte
• Data retention : *0 years ( + *5 °C), *5 years ( + *5 °C), over **0 years ( + *5 °C)
• Operating power supply voltage : 2.7 V to 3.6 V
• Low power consumption : Operating power supply current *0 μA (* @********************urrent 0.1 μA (Typ)
• Operation ambient temperature range : − *0 °C to + *5 °C
• Package : *-pin plastic SOP (FPT*8P-M*2)
*-pin plastic SON (LCC*8P-M*4)
RoHS compliant
DS***********1v*-E