タイトルまたは説明

Sapphire Wafer Application:
Growth substrate for III-V and II-VI compounds   
Electronics and optoelectronics
IR applications
Silicon On Sapphire Integrated Circuit(SOS)
Radio Frequency Integrated Circuit(RFIC)

Specification:
Material: >*9.**9% , High Purity, Al2O3
Orientation: C-axis(***1)
Diameter: 1 2 3 4 5 6 8
Surface roughness:
Front Side: Epi-Polished, Ra≤0.2nm
Back Side: Epi-Polished, Ra≤0.2nm (SSP)
Fine ground Ra=0.**1.2um (DSP)
Class **0 Clean room cleaning and vacuum nitrogen packaging