Part Number : FP*5R*2KT4 Voltage ***0V Configuration PIM Housing EconoPIM 2 SIKEYUE specializes in branded products such as Infineon, Hitachi Energy ABB , PI, LITEON, Grandsemi, Lcor...
    IGBT power module is a power module composed ofInsulatedGateBipolar Transistors IGBTs .IGBT power module is a semiconductor power module that integrates IGBT and driver circuits. It can conve...
    The Semicorex SiC Coated Graphite Barrel Susceptor is the perfect choice for semiconductor manufacturing applications that require exceptional heat distribution and thermal conductivity. Its high-p...
    Product Description Model No. : SC*****5MMMR Brand: Original Min. working Temperature: **0 Max. working Temperature : *0 Min. Voltage: 4V Max. Voltage: 6.5V LOT: PS***7 Usage: Automotive chi......
    Product Description Model No. : SC*****0 Brand: Original Min. working Temperature: **0 Max. working Temperature : **5 Min. Voltage: 2V Max. Voltage: 8.5V Usage: Automotive chips Origin count......
    Model No. FLL**0MK Description L-Band Medium High Power GaAs Features : High Output Power: P1dB *6.0dBm Typ. High Gain: G1dB *1.5dB Typ. ...
    Model No.: MRFX**0HS Brand: Original In stock: **0 Features: Unmatched input and output allowing wide frequency range utilization Output impedance fits a 4:1 transformer Device can be ...
    Model No.: TIM******5SL***1 Brand: Original In Stock: *0 pcs First come, first served Features: Low Intermodulation Distortion IM3 **5 dBc at Pout *5.5 dBm Single Carrier Level Hi...
    Product Descriprtion: Model No. MRF7S****5HS / MRF7S****5HR3 / MRF7S****5HSR3 Designed for WiMAX base station applications with frequencies up to ***0 MHz. Suitable for WiMAX, WiBro, BWA, and ...
    Product Descriprtion: Model No. MRFE6S***0HSR3 / MRFE6S***0HR3 / MRFE6S***0HS Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from **5 to **0 MHz. Suitab...
    Product Description The MW7IC***0N wideband integrated circuit is designed with on-chip matching that makes it usable from ***5 to ***0 MHz. This multi-stage structure is rated for *4 to *2 Volt op...
    Model No.: VRF**1 Brand: APT In stock **0 pcs Features: **0w with *4dB Typical Gain **5MHz , *0V **0w with *2dB Typical Gain *0MHz , *0V Excellent Stability Low IMD Common Source conf...
    Model No. : SD******2 MKS Power PCB Brand: ST In Stock: **0 pcs Features: Gold metallization Excellent Thermal Stability Common source configuration Pout **0W min. with *0 dB Gain *0 MHz 2pcs of ...
    Model No. : MD7IC***5NR1 Brand: Freescale NXP In stock ***0 pcs Features: Production Tested in a Symmetrical Doherty Configuration **0 PAR Tested for Guaranteed Output Power Capability Charac...
    Model No.: ARF***0 Brand: APT The ARF***0 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line **0V operation in high power scientific, medical and, indus...
    Model No.: FMM***6VF RF Power Amplifier PCB Brand: Eudyna Fujitsu In stock:***0 pcs Features: High Output Power: *4.0dBm typ. High Liner Gain: *8.0dB typ. Low VSWR Broard Band: 5....
    AE AE*******9 B AE*******9 AE RF Power MODULE APEX Professional one station high-frequency tube, RF. Microwave Amplifier Model No. : AE*******9 Brand:...
    Product: Microwave RF tubes Model: BLF**8XR condition: New GOLD METALLIZATION Ceramic encapsulation High efficiency Easy power control integrated ESD protection Excellent thermal stabil...
    Product Details: Brand: Microsemi Product Name: RF power Mosfet tubes Model Number: ARF***0 Votage: **0V Power:**0w Frequency: *0MHz Gain: *7dB Class D Feature: High Performance Powe...
    Model No. : FLL**7ME L**7 Description : The FLL**1ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and...
    Model No. : ******9C Name: High Power RF Tubes Brand: APT Max. working temperature: **5 min. working temperature: **0 Max. Voltage: 7.5V Min. Voltage: 4.5V Length: 2.4MM Width: 1.6mm height:......
    Model No. : TIM******0SL Brand: TOSHIBA Product Name: Microwave RF transister Description: Input Voltage Range: *0V to *0V *5V Abs. Max. Wide Output Voltage: 4.5V to *8V Vout Vin/2 *7...
    Product Description: Model Number:AE *******9A RF Power MODULE APEX Professional one station high-frequency tube, RF. Microwave Amplifier Product Pins: AE Pinnacle Usage: nbs...
    DESCRIPTION The FLM******8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a *0 ohm system. Eudynas stringent Quality As...
    The QPA***1 is an integrated *-stage Power Amplifier Module designed for massive MIMO applictions up yo 3W RMS at the device output covering frequency range from 4.4 to 5, 0 GHz. The module is *0 ...
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