离岸价格
Get Latest Price750 ~ 750 / ( Negotiable )
|10 Piece Minimum Order
国:
China
モデル番号:
-
离岸价格:
750 ~ 750 / ( Negotiable ) Get Latest Price
ロケーション:
-
最低注文量の価格:
750
最低注文量:
10 Piece
パッケージの詳細:
-
納期:
-
供給能力:
-
支払いタイプ:
T/T, Other
製品グループ :
-
Crees CGHV****0F2 is a gallium nitride (GaN) High Electron Mobility
Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
Matched (IM) FET
offers excellent power added efficiency in comparison to other
technologies. GaN
has superior properties compared to silicon or gallium arsenide,
including higher
breakdown voltage, higher saturated electron drift velocity and
higher thermal
conductivity. GaN HEMTs also offer greater power density and wider
bandwidths
compared to GaAs transistors. This IM FET is available in a
metal/ceramic flanged
package for optimal electrical and thermal performance.
| Parameter | 8.4 GHz | 8.8GHz | 9.0GHz | 9.2GHz | 9.4GHz | 9.6GHz | units |
| linear power | *3.8 | *2.8 | *2.3 | *2.3 | *2.2 | *1.8 | dB |
| output power | *5 | *7 | *1 | *2 | *5 | *5 | W |
| power gain | *0.4 | 9.9 | *0.1 | *0.1 | 9.8 | 9.8 | dB |
| power added efficiency | *7 | *4 | *2 | *4 | *8 | *5 | % |
| Features | Application |
| 8.**9.6 GHz Operation | Marine Radar |
| *0WPOUT typical | Weather Monitoring |
| *0dB Power Gain | Air Traffic Control |
| *5% Typical PAE | Maritime Vessel Traffic Control |
| *0 Ohm Internally Matched | Port Security |
| <0.1 dB Power Droop |
| 国: | China |
| モデル番号: | - |
| 离岸价格: | 750 ~ 750 / ( Negotiable ) Get Latest Price |
| ロケーション: | - |
| 最低注文量の価格: | 750 |
| 最低注文量: | 10 Piece |
| パッケージの詳細: | - |
| 納期: | - |
| 供給能力: | - |
| 支払いタイプ: | T/T, Other |
| 製品グループ : | - |
