タイトルまたは説明

Crees CGHV****0F2 is a gallium nitride (GaN) High Electron Mobility Transistor

(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET

offers excellent power added efficiency in comparison to other technologies. GaN

has superior properties compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift velocity and higher thermal

conductivity. GaN HEMTs also offer greater power density and wider bandwidths

compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged

package for optimal electrical and thermal performance.