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Sell RF Power Field-Effect Transistor[MRF372]

Sell RF Power Field-Effect Transistor[MRF372]

FOB Price

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( Negotiable )

|

Minimum Order

Place of Origin:

ShenZhen Of China

Price for Minimum Order:

-

Minimum Order Quantity:

10 Piece

Packaging Detail:

Original Packing Box

Delivery Time:

1-2 Business Days

Supplying Ability:

1000 Piece per Day

Payment Type:

Other, Western Union, T/T

今すぐお問い合わせください
Novelty Electronics Limited

Novelty Electronics Limited

China

無料会員

連絡先担当者 Mr. Allen

Sungang West Rd Rd, Shenzhen, Guangdong

今すぐお問い合わせください

Description

The RF MOSFET Line
 
 
 
 
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies
from **0 to **0 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in
*2 volt transmitter equipment.
• Typical Narrowband Two–Tone *@********************
f2 = **3 MHz, *2 Volts
Output Power — **0 Watts PEP
Power Gain — *7 dB
Efficiency — *6%
IMD — –*5 dBc
• Typical Broadband Two–Tone Performance

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Mr. Allen < Novelty Electronics Limited >

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