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Place of Origin:
Russia
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Russia
連絡先担当者 Ms. Ekaterina
Molokova 1, Krasnoyarsk
Monocrystalline silicon ingots, n-type, phosphor dopant (raw material polycrystalline silicon with resistance **0 Ohm/cm according to Boron) resistance: 0,1 Ohm/cm – 7,5 Ohm/cm (+) – *0 diameter: *0,0 mm – *6 mm (+) 0,5 – 1,5&#***4;&#***4; life time: not less then 7,5 mcs ********2 ***6 kg