Description

Specification: High purity Te: *9.**9% Te*5N-L*1 Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Sn, Si Total impurity content: ≤*0ppm High purity Te: *9.***9% Te*6N-L*2 Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca Total impurity content: ≤1ppm High purity Te: *9.****9% Te*7N-L*3 Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca Total impurity content: ≤0.1ppm Application: Use for preparation Ⅱ-Ⅵ elements chemical compound semiconductor, thermo-electricity transfer cell, refrigerating cell, piezoelectric crystal and infrared detector. Used as the material of solar cell etc… Package: Packed with terylene film, and double poly-film with vacuum encapsulation, do this twice, then packed with aluminum foil with argon encapsulation, or packed with glass tube with vacuum encapsulation directly.