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連絡先担当者 Mr. du
fubei, emei shan, sichuan
Specification: High purity Ga: *9.**9% Ga*5N-I*4 Testing impurity: Al, Ca, Cu, Fe, Hg, In, Mg, Ni, Pb, Sn, Zn, Si Total impurity content: ≤*0ppm High purity Ga: *9.***9% Ga*6N-I*5 Testing impurity: Cr, Cu, Fe, Mg, Ni, Pb, Sn, Zn, Si Total impurity content: ≤1ppm High purity Ga: *9.****9% Ga*7N-I*6 Testing impurity: Cu, Fe, Mg, Mn, Pb, Sn, Zn, Si Total impurity content: ≤0.1ppm Application: Used for preparation Ⅲ-Ⅴ elements chemical compound semiconductor, high purity metal and germanium, dopant of mono-crystal silicon. Package: Packed with polythene plastic bottle, and double poly-film with vacuum encapsulation. Packed with glass tube with vacuum encapsulation directly.
