Description

2inch 3inch 4inch 5inch 6inch Oxide silicon wafer
Growth Method    CZ
Conductivity Type   P/N   
Dopant        P,B,AS
Resistivity:    0.**1 - 1ohm-cm , 1 - ***0 ohm-cm
Oxide layer thickness: customization
Crystal orientation:  <**0> <**1>
surface: no scratch, no saw mark, no chip, no stain
single/double polished
packing Aluminum foil vacuum packing        
particle <*0 & 0.3um
TTV < 4um
TIR < 4um
bow < *0um
warp < *0um
EPD < **0