Description

Package:TO***0/**0F
Vds: **0V
Id: 2.0A
Rds: 5.0ohm
PD:*0W
It can replace of FQP2N*0(FS)

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enables power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.  It's usually used at high efficient DC to DC converter block and SMPS, it's typical application is TV and monitor.