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South Africa
連絡先担当者 general
Pretoria, Gauteng
Item | IC grade monocrystalline silicon ingot | |
Size | *0"**6" | |
Growth method | CZ | |
Diameter | ******0mm | |
Orientation | <**0> | |
Type | N-type / P-type | |
Dopant | P-type:Boron | |
N-type:Phos. | ||
Purity | *1N(*9.********9%) | |
Oxygen Content | ≤*8 New PPMA | |
Carborn Content | ≤1 New PPMA | |
Resistivity | ≥0.**1Ω•cm |