4 inch GaN on Si Epi Wafer Manufacturer For RF HEMT Application

Description

4 inch GaN on Si Epi Wafer Manufacturer For RF HEMT Application
As the leading Manufacturer of GaN Epi wafer, HMT company support customized GaN on Si epi wafer with 4 inch to 8 inch. Si Substrate/AlN/(Al,Ga)N buffer/GaNchannel/AlGaNbarrier/**5 nm GaN/SiNxcap​.
Our Si thickness have **5um ***0um ***0um. We have d mode ,e mode and RF HEMT structure. Please contact us and get detailed parametes.
GaN epitaxial wafer technology is the core technology of GaN chip production, GaN high-power semiconductor,high RF semi -conductor as a large number of power control systems and communications for high-speed rail, electric vehicles, 5G communications, radar, robotics and other industries .