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AlGaN/GaN On SiC RF HEMT Wafer Manufacturer With High 2DEG Mobility

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10 Piece

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Homray Material Technology Co., Ltd

China

無料会員

連絡先担当者 Mr. Kim

LiSheng Industrial Building,60 Suli Road, Soochow, Jiangsu

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Description

AlGaN/GaN On SiC RF HEMT Wafer Manufacturer With High 2DEG Mobility

Homray material technology manufacture 4 inch AlGaN/GaN On SiC Epitaxy Wafer for RF HEMT applications. Using gallium nitride (GaN) HEMT epiwafer brings various benefits for the next generation high frequency and high power devices. GaN devices can achieve very high power efficiency, which accordingly reduces their size and lower power consumption, consequently that of their final products.

HMT has been growing more than *0,**0 wafers/month that have been successfully processed to produce HV and LV devices that were shipped and used by customers. HMT GaN-on-Si epitaxial process have been optimized to systematically obtain uniform and reproducible crack-free epi-wafers with low dislocations density and defects.

AlGaN/GaN On SiC RF HEMT Wafer Manufacturer With High 2DEG Mobility

Homray Material Technology Co., Ltd

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AlGaN/GaN On SiC RF HEMT Wafer Manufacturer With High 2DEG Mobility

Homray Material Technology Co., Ltd

Description

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