タイトルまたは説明

Since ***1 another important invention was presented by CREE (NC, USA): a silicon carbide (SiC) Schottky diode. SiC Schottky diodes have about *0 times lower reverse leakage current compared to silicon Schottky diodes. As of ***1[update], they are available from several manufacturers in variants up to ***0 V.

Silicon carbide has a high thermal conductivity and temperature has little influence on its switching and thermal characteristics. With special packaging it is possible to have operating junction temperatures of over **0 K, which allows passive radiation cooling in aerospace applications.

(Silicon Carbide Schottky Diode)
HSBR**2A 2A/***0V
HSBR**5A 5A/***0V
HSBR**8A 8A/***0V
HSBR**0A *0A/***0V
HSBR**5A *5A/***0V
HSBR**0A *0A/***0V
HSBR**0A *0A/***0V
(Schottky Diode)
SBR*0C  *0A  **0V TO***0
SBR*0C  *0A  **0V TO***7
SBR*0C  *0A  **0V TO***7
SBR*0C  *0A  **0V TO***7
SBR**0C **0A **0V TO***7

The Schottky diode (named after German physicist Walter H. Schottky; also known as hot carrier diode) is a semiconductor diode with a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless can be considered primitive Schottky diodes.

When current flows through a diode there is a small voltage drop across the diode terminals. A normal silicon diode has a voltage drop between 0.6–1.7 volts, while a Schottky diode voltage drop is between approximately 0.*5–0.*5 volts. This lower voltage drop can provide higher switching speed and better system efficiency.