离岸价格
Get Latest Price40 ~ 45 USD / Piece
|60 Piece Minimum Order
国:
China
モデル番号:
3235
离岸价格:
40 ~ 45 USD / Piece Get Latest Price
ロケーション:
China
最低注文量の価格:
40 per Piece
最低注文量:
60 Piece
パッケージの詳細:
Module
納期:
goods in stock or 4-6 weeks
供給能力:
9000 Piece per Month
支払いタイプ:
T/T
製品グループ :
連絡先担当者 Mr. Henry
XiangMei GardenBuilding "1" unit 5 Room 2, ChangZhou, Other
The IGBT is a semiconductor device with four alternating layers
(P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS)
gate structure without regenerative action. This mode of operation
was first proposed by Yamagami in his Japanese patent S*******9,
which was filed in ***8.[2] This mode of operation was first
experimentally discovered by B. Jayant Baliga in vertical device
structures with a V-groove gate region and reported in the
literature in ***9.[3] The device structure was referred to as a
‘V-groove MOSFET device with the drain region replaced by a p-type
Anode Region’ in this paper and subsequently as the insulated gate
rectifier (IGR),[4] the insulated-gate transistor (IGT),[5] the
conductivity-modulated field-effect transistor (COMFET)[6] and
"bipolar-mode MOSFET".[7] BY wikipedia
(***0V IGBT Dual Module)
2MG*5B*2STD (*5A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
(**0V IGBT Dual Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
| 国: | China |
| モデル番号: | 3235 |
| 离岸价格: | 40 ~ 45 / Piece Get Latest Price |
| ロケーション: | China |
| 最低注文量の価格: | 40 per Piece |
| 最低注文量: | 60 Piece |
| パッケージの詳細: | Module |
| 納期: | goods in stock or 4-6 weeks |
| 供給能力: | 9000 Piece per Month |
| 支払いタイプ: | T/T |
| 製品グループ : | IGBT Module |
