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Futian street,Shekou,Guangdong,China China
Package / Case TO-247-3 Transistor Polarity N-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Cu
Package / Case LFPAK-33-8 Transistor Polarity N-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 25 V Id - Continuous Drain C
Package / Case TO-220-3 Transistor Polarity N-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Cur
Package / Case SO-8FL-4 Transistor Polarity N-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Cur
Package / Case TO-3PN-3 Transistor Polarity N-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 300 V Id - Continuous Drain Cu
Package / Case TSOP-6 Transistor Polarity N-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Curre
Package / Case TDSON-8 Transistor Polarity N-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V Id - Continuous Drain Curr
Package / Case TO-220-3 Transistor Polarity N-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 250 V Id - Continuous Drain Cu
Manufacturer onsemi Product Category MOSFET Technology Si Brand onsemi Product Type MOSFET Subcategory MOSFETs
Package / Case SO-8FL-4 Transistor Polarity N-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Cur
Package / Case PowerPAK-1212-8 Transistor Polarity P-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V Id - Continuous D
Package / Case PowerPAK-1212-8 Transistor Polarity P-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Dr
Package / Case PowerPAK-1212-8 Transistor Polarity P-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Dr
Package / Case PowerPAK-SO-8 Transistor Polarity N-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V Id - Continuous Dra
Package / Case HDSOP-10 Transistor Polarity N-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Cu
Package / Case SOIC-8 Transistor Polarity P-Channel Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Curre
連絡先担当者 Mr. Sam Lam
住所 Futian street, Shekou, Guangdong
We will contact you soon .
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