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GaN wafer

GaN wafer

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Place of Origin:

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Price for Minimum Order:

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Minimum Order Quantity:

10 Piece

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T/T

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Helios new materials Limited

Helios new materials Limited

China

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連絡先担当者 EDY

果园路12号, Wuxi, Jiangsu

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Description

Regular specification of GaN on Sapphire wafer
Dimensions: 2inch 4inch
Substrate: Sapphire
Thickness: **5um
Orientation: C-axis(***1)± 1°/ R/ M/ A
Conduction Type: Semi-Insulating/ N/ P
Dislocation Density:     
XRD FWHM of (***2)
XRD FWHM of (****2) < **0 arcsec
Useable Surface Area: min *0%
Polishing Standard: Single/Double Side Polishing

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