Description
The aluminum nitride (AlN) ceramic has high thermal
conductivity(***0 times as the alumina ceramic), low dielectric
constant and dissipation factor, good insulation and excellent
mechanical properties, non-toxic, high thermal resistance, chemical
resistance ,and the linear expansion coefficient is similar with
Si,which is widely used in communication components, high power
led, power electronic devices and other fields. Special spec
products can be produced upon requests.
Polished ceramic substrate: Our AlN substrate can be
polished(single and double polish) by the advanced machine which
imported from abroad. Ceramic substrate surface roughness can reach
to less than 0.**5um without porous after being polished. It is
perfectly suitable for the device application of small spec, high
precision , wiring density and good stability.
Laser processing service: Through laser machine scribing, cutting,
and drilling, we can process AlN substrate with high accuracy and
absolute consistency upon customer’s request.
Regular specification of AIN wafer
Square pieces
Thickness: 0.**5mm/0.5mm/0.**5mm/1mm
Length/wide: *0.8mm/*6.2mm/**1.6mm/**4.3mm
Round pieces
Thickness: 1mm, 1.2mm, 1.5mm, 2mm, 2.5mm
Diameter: *6/*9mm, *0/*6mm, *0/*5mm, *0/*5mm, *0/*2mm, *0mm, *5mm,
*0mm
