GaAs wafer

Description

Helios provides single crystal GaAs wafer to optoelectronics and microelectronics industry, in diameter range from 2" to 4". LEC and VGF are two main growth method providing the widest choice of GaAs material. Gallium Arsenide can be supplied as ingots and polished wafers, with two different conductive types, semi-conducting and semi-insulating. The epi-ready wafer is available for MOCVD and MBE application. GaAs Wafer Features : High mobility High frequency Low power consumption GaAs Wafer Applications : Visible and infrared LED Light emitting diodes Laser diodes Semi-conducting GaAs Specifications Growth Method: VGF Dopant: Si (n-type) AND Zn (p-type) Wafer Shape: Round (DIA: 2inch, 3inch, 4inch and 6inch) Surface Orientation*: (**0)+/*0.5° *Other Orientations maybe available upon request